TRANSITION LINE STRENGTHS FOR EXCITONS BOUND TO NEUTRAL ACCEPTORS IN DIRECT-GAP SEMICONDUCTORS

被引:28
作者
WHITE, AM [1 ]
机构
[1] ROY RADAR ESTAB,GREAT MALVERN,WORCESTERSHIRE,ENGLAND
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 11期
关键词
D O I
10.1088/0022-3719/6/11/022
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1971 / 1974
页数:4
相关论文
共 5 条
[1]   PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY IN UNDOPED EPITAXIAL GAAS [J].
SHAH, J ;
LEITE, RCC ;
NAHORY, RE .
PHYSICAL REVIEW, 1969, 184 (03) :811-&
[2]  
Tinkham M., 1964, GROUP THEORY QUANTUM
[3]   PHOTOLUMINESCENCE SPECTRA OF EXCITONS BOUND TO GROUP II ACCEPTORS IN INDIUM PHOSPHIDE [J].
WHITE, AM ;
WILLIAMS, EW ;
FAIRHURST, KM ;
BARDSLEY, W ;
DAY, B ;
DEAN, PJ .
SOLID STATE COMMUNICATIONS, 1972, 11 (09) :1099-+
[4]   PHOTOLUMINESCENCE SPECTRUM OF BOUND EXCITONS IN INDIUM PHOSPHIDE AND GALLIUM ARSENIDE [J].
WHITE, AM ;
TAYLOR, LL ;
ASHEN, DJ ;
CLARKE, RC ;
MULLIN, JB ;
DEAN, PJ .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13) :1727-&
[5]  
WHITE AR, TO BE PUBLISHED