CARBON DOPING IN ALGAAS FOR ALGAAS/GAAS GRADED-BASE HETEROJUNCTION BIPOLAR-TRANSISTOR BY FLOW-RATE MODULATION EPITAXY

被引：9

作者：

ITO, H

MAKIMOTO, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 24期

关键词：

D O I：

10.1063/1.104781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter investigates carbon doping in AlGaAs using flow-rate modulation epitaxy (FME). The tendency of hole concentration increasing with Al composition is explained by the thermal decomposition of trimethylaluminum molecules on the substrate surface. The highest hole concentration obtained is 3 X 10(20) cm-3 in Al0.4Ga0.6As layers. An AlGaAs/GaAs heterojunction bipolar transistor with an FME-grown compositionally graded carbon-doped base layer was fabricated for the first time. It exhibits a current gain of 25 with 2 X 10(19) cm-3 base doping.

引用

收藏

页码：2770 / 2772

页数：3

相关论文

共 11 条

[1] HEAVY CARBON DOPING OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAAS USING CARBON-TETRACHLORIDE [J].

CUNNINGHAM, BT ;

HAASE, MA ;

MCCOLLUM, MJ ;

BAKER, JE ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1905-1907

[2] CARBON-TETRACHLORIDE DOPED ALXGA1-XAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

CUNNINGHAM, BT ;

BAKER, JE ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1990, 56 (09) :836-838

[3] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

ILEGEMS, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1278-1287

[4]

ITO H, 1986, I PHYS C SER, V79, P607

[5] FLOW-RATE MODULATION EPITAXY OF GAAS AND ALGAAS [J].

KOBAYASHI, N ;

MAKIMOTO, T ;

YAMAUCHI, Y ;

HORIKOSHI, Y .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) :640-651

[6] METALLIC P-TYPE GAAS AND INGAAS GROWN BY MOMBE [J].

KONAGAI, M ;

YAMADA, T ;

AKATSUKA, T ;

NOZAKI, S ;

MIYAKE, R ;

SAITO, K ;

FUKAMACHI, T ;

TOKUMITSU, E ;

TAKAHASHI, K .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :359-365

[7]

Kroemer H., 1957, RCA REV, V18, P332

[8] CONTROLLED CARBON DOPING OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY [J].

KUECH, TF ;

TISCHLER, MA ;

WANG, PJ ;

SCILLA, G ;

POTEMSKI, R ;

CARDONE, F .

APPLIED PHYSICS LETTERS, 1988, 53 (14) :1317-1319

[9] CARBON DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS FROM A HEATED GRAPHITE FILAMENT [J].

MALIK, RJ ;

NOTTENBERG, RN ;

SCHUBERT, EF ;

WALKER, JF ;

RYAN, RW .

APPLIED PHYSICS LETTERS, 1988, 53 (26) :2661-2663

[10]

STRINGFELLOW GB, 1989, ORGANOMETALLIC VAPOR, P18