THE EFFECT OF UNIAXIAL TENSILE STRESS ON IMPURITY CONDUCTION IN GERMANIUM

被引:3
作者
FRITZSCHE, H
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10.1016/0022-3697(59)90329-4
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O6 [化学];
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0703 ;
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页码:257 / 259
页数:3
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[2]  
JAMES HM, 1956, Q REPORT OCT DEC
[3]   SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].
KOHN, W .
SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320
[4]   BROADENING OF IMPURITY LEVELS IN SILICON [J].
LAX, M ;
BURSTEIN, E .
PHYSICAL REVIEW, 1955, 100 (02) :592-602
[5]   TEMPERATURE DEPENDENCE OF THE PIEZORESISTANCE OF HIGH-PURITY SILICON AND GERMANIUM [J].
MORIN, FJ ;
GEBALLE, TH ;
HERRING, C .
PHYSICAL REVIEW, 1957, 105 (02) :525-539
[6]   THEORY OF TRANSPORT EFFECTS IN SEMICONDUCTORS - THERMOELECTRICITY [J].
PRICE, PJ .
PHYSICAL REVIEW, 1956, 104 (05) :1223-1239
[7]   PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J].
SMITH, CS .
PHYSICAL REVIEW, 1954, 94 (01) :42-49