OPTIMUM GEOMETRY AND SPACE-CHARGE EFFECTS IN VACUUM MICROELECTRONIC DEVICES

被引：12

作者：

CUI, Z ^{[1
]}

TONG, LS ^{[1
]}

机构：

[1] SOUTHEAST UNIV, ELECTR RES INST, NANJING 210018, PEOPLES R CHINA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 02期

关键词：

D O I：

10.1109/16.182526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new numerical method is presented for the simulation of electrical characteristics of microemitter devices. The method, a combination of the boundary integral method and the finite difference method, is capable of dealing with arbitrary microemitter shapes and calculating space-charge effects. A spherical mesh structure has been used, which allows calculations with high resolution in the vicinity of a microemitter apex. Seven different shapes of microemitters have been simulated for the comparison of their field-enhancement factors. The optimum geometry of a microemitter is found to be a cusp-like shape. The space charge has an effect on field emission current only for current densities above 10(8) A/cm2.

引用

页码：448 / 452

页数：5

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