HIDDEN ANISOTROPY OF LOCALIZED EXCITON-STATES IN SHORT-PERIOD GAAS/ALAS SUPERLATTICES

被引：23

作者：

PERMOGOROV, S ^{[1
]}

NAUMOV, A ^{[1
]}

GOURDON, C ^{[1
]}

LAVALLARD, P ^{[1
]}

机构：

[1] UNIV PARIS 07, PHYS SOLIDES GRP, CNRS, UA 17, F-75251 PARIS, FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 74卷 / 10期

关键词：

D O I：

10.1016/0038-1098(90)90709-K

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the photoluminescence and photoluminescence excitation spectra of several GaAs/AlAs short period superlattices. We show that the main emission line corresponds either to a direct (Γ) or pseudo-direct (Xz) recombination process. The emission bands are inhomogeneously broadened and, at low temperature, excitons are localized. Under resonant excitation of the lowest exciton states with linearly polarized light, some samples exhibit a very large degree of polarization of luminescence. This is attributed to hidden anisotropy of localized exciton states. The angular dependence of the degree of polarization shows that the principal axes of the local anisotropy are directed along the [110] or [110] cristallographic axes in the (001) layer plane. This anisotropy likely originates from the microscopic properties of monolayer-thick growth steps in the superlattice. © 1990.

引用

页码：1057 / 1061

页数：5

共 19 条

[1]

BASTARD G, 1988, WAVE MECHANICS APPLI

[2] OBSERVATION OF CARRIER LOCALIZATION IN INTENTIONALLY DISORDERED GAAS/GAALAS SUPERLATTICES [J].

CHOMETTE, A ;

DEVEAUD, B ;

REGRENY, A ;

BASTARD, G .

PHYSICAL REVIEW LETTERS, 1986, 57 (12) :1464-1467

[3] OPTICAL EVIDENCE OF THE DIRECT-TO-INDIRECT-GAP TRANSITION IN GAAS-ALAS SHORT-PERIOD SUPERLATTICES [J].

DANAN, G ;

ETIENNE, B ;

MOLLOT, F ;

PLANEL, R ;

JEANLOUIS, AM ;

ALEXANDRE, F ;

JUSSERAND, B ;

LEROUX, G ;

MARZIN, JY ;

SAVARY, H ;

SERMAGE, B .

PHYSICAL REVIEW B, 1987, 35 (12) :6207-6212

[4]

DAWSON P, UNPUB SEMICOND SCI T

[5] X-POINT EXCITONS IN AIAS/GAAS SUPERLATTICES [J].

FINKMAN, E ;

STURGE, MD ;

TAMARGO, MC .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1299-1301

[6] EFFECTS OF THE LAYER THICKNESS ON THE ELECTRONIC CHARACTER IN GAAS-ALAS SUPERLATTICES [J].

IHM, J .

APPLIED PHYSICS LETTERS, 1987, 50 (16) :1068-1070

[7]

IVCHENKO EL, IN PRESS

[8] Spin exchange in excitons, the quasicubic model and deformation potentials in II-VI compounds [J].

Langer, D. W. ;

Euwema, R. N. ;

Era, Koh ;

Koda, Takao .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4005-4022

[9] LOCALIZED INDIRECT EXCITONS IN A SHORT-PERIOD GAAS/ALAS SUPERLATTICE [J].

MINAMI, F ;

HIRATA, K ;

ERA, K ;

YAO, T ;

MASUMOTO, Y .

PHYSICAL REVIEW B, 1987, 36 (05) :2875-2878

[10] EFFECTS OF ELECTRONIC COUPLING ON THE BAND ALIGNMENT OF THIN GAAS/ALAS QUANTUM-WELL STRUCTURES [J].

MOORE, KJ ;

DAWSON, P ;

FOXON, CT .

PHYSICAL REVIEW B, 1988, 38 (05) :3368-3374

← 1 2 →