ADHESION OF PHOTORESIST PATTERN BAKED AT 80 TO 325-DEGREES-C IN TETRAMETHYL-AMMONIUM-HYDROXIDE AQUEOUS-SOLUTION

被引：23

作者：

KAWAI, A ^{[1
]}

NAGATA, H ^{[1
]}

TAKATA, M ^{[1
]}

机构：

[1] NAGAOKA UNIV TECHNOL,DEPT ELECT ENGN,NIIGATA 94021,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 11期

关键词：

ADHESION; PHOTORESIST; LITHOGRAPHY; SURFACE ENERGY; SWELLING; INTRUSION; PATTERN DEVELOPMENT; CONTACT ANGLE; THERMODYNAMICS;

D O I：

10.1143/JJAP.31.3725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Adhesion characteristics of a photoresist thin film baked onto a spin-on SiO2 layer at 80 to 325-degrees-C are studied in a tetramethyl-ammonium-hydroxide (TMAH) developer. The maximum value of adhesion strength is observed in the temperature range of 150 to 250-degrees-C. It is found that the surface energy model cannot explain all of the experimental results. The following two models are introduced as new adhesion factors: (i) decrease of surface energy of the TMAH developer due to dissolution of a photoresist into it above 250-degrees-C and (ii) decrease of mechanical strength of a photoresist pattern by swelling under 150-degrees-C.

引用

页码：3725 / 3730

页数：6

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