IN-SITU MEASUREMENT OF ALAS AND GAAS REFRACTIVE-INDEX DISPERSION AT EPITAXIAL-GROWTH TEMPERATURE

被引：13

作者：

BARDINAL, V

LEGROS, R

FONTAINE, C

机构：

[1] Lab d'Analyse et d'Architecture des, Systemes, Toulouse

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.114681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new technique of in situ dynamic reflectometry taking advantage of a tunable laser light has been presented. In a first step, this technique was successfully used to measure AlAs and GaAs refractive indices at a growth temperature between 760 and 960 nm. These measured values were shown to be in good agreement with a model based on the Moss semiempirical expression, which can then be used for the design of the optical behavior of III-V materials at growth temperature.

引用

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页码：244 / 246

页数：3

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