COLLECTIVE ELECTRON INTERACTION IN DOUBLE-BARRIER GAAS TRANSISTORS

被引：7

作者：

GRUZINSKIS, V

KERSULIS, S

MICKEVICIUS, R

POZELA, J

REKLAITIS, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 3-4期

关键词：

D O I：

10.1016/0038-1101(88)90292-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：345 / 347

页数：3

共 8 条

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[7] INJECTED-HOT-ELECTRON TRANSPORT IN GAAS [J].

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