INTERFACE ROUGHNESS IN QUANTUM-WELLS PREPARED WITH GROWTH INTERRUPTIONS

被引：17

作者：

ORSCHEL, B ^{[1
]}

OELGART, G ^{[1
]}

HOUDRE, R ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,MICHAEL PROCTOR & FRANZ KARL REINHART INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.108542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use photoluminescence to examine GaAs/(AlGa)As single quantum wells of different thickness grown by molecular beam epitaxy with and without growth interruptions. We observed distinctive peaks arising from the heavy-hole exciton splitting associated with heterointerface growth ''islands.'' Comparison of the exciton peak energies with the predictions of the theory proposed by L. C. Andreani and A. Pasquarello [Phys. Rev. B 42, 8928 (1990)] (which was supported by independent experiments) yields a constant value of 0.85 monolayers for the apparent thickness fluctuations given rise to the different exciton peaks observed from each well. This behavior strongly supports the bimodal roughness model of the heterointerface in quantum wells prepared with growth interruptions as it was recently suggested by C. A. Warwick and R. F. Kopf [Appl. Phys. Lett. 60, 386 (1992)].

引用

页码：843 / 845

页数：3

共 9 条

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