LASER ANNEALING OF OHMIC CONTACTS ON GAAS

被引：15

作者：

ORABY, AH ^{[1
]}

MURAKAMI, K ^{[1
]}

YUBA, Y ^{[1
]}

GAMO, K ^{[1
]}

NAMBA, S ^{[1
]}

MASUDA, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 07期

关键词：

D O I：

10.1063/1.92413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：562 / 564

页数：3

共 9 条

[1]

ALLEN SD, 1979, LASER ELECTRON BEAM, P514

[2]

BARNES PA, 1979, LASER ELECTRON BEAM

[3] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].

BERGER, HH .

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[4] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[5]

ECHARDT G, 1979, LASER ELECTRON BEAM, P445

[6]

ECHARDT G, 1978, LASER SOLID INTERACT, P641

[7]

GOLD RB, 1978, LASER SOLID INTERACT, P635

[8] Q-SWITCHED RUBY-LASER ALLOYING OF OHMIC CONTACTS ON GALLIUM-ARSENIDE EPILAYERS [J].

MARGALIT, S ;

FEKETE, D ;

PEPPER, DM ;

LEE, CP ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :346-347

[9] FORMATION OF OHMIC CONTACTS TO 3-5 SEMICONDUCTORS, USING A LASER-BEAM [J].

POUNDS, RS ;

SAIFI, MA ;

HAHN, WC .

SOLID-STATE ELECTRONICS, 1974, 17 (03) :245-&

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