A MODEL FOR DAMAGE RELEASE IN ION-IMPLANTED SILICON

被引：27

作者：

CEROFOLINI, GF

MEDA, L

VOLPONES, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.340432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4911 / 4920

页数：10

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