MODELING OF STRESS EFFECTS IN SILICON OXIDATION

被引：90

作者：

SUTARDJA, P ^{[1
]}

OLDHAM, WG ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期

关键词：

D O I：

10.1109/16.43661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2415 / 2421

页数：7

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