THE INFLUENCE OF ADSORBED LAYERS IN CONTROLLING SCHOTTKY BARRIERS

被引:31
作者
MONTGOMERY, V
WILLIAMS, RH
SRIVASTAVA, GP
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 08期
关键词
D O I
10.1088/0022-3719/14/8/005
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:L191 / L194
页数:4
相关论文
共 13 条
[11]   METAL CONTACTS TO SILICON AND INDIUM-PHOSPHIDE CLEAVED SURFACES AND THE INFLUENCE OF INTERMEDIATE ADSORBED LAYERS [J].
WILLIAMS, RH ;
VARMA, RR ;
MONTGOMERY, V .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1418-1421
[12]  
WILLIAMS RH, J VAC SCI TECHNOL
[13]   BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYER [J].
WU, CY .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4919-4922