DIFFRACTION OF HE ATOMS AT A SI(111) 7X7 SURFACE

被引:33
作者
CARDILLO, MJ
BECKER, GE
机构
[1] Bell Laboratories, Murray Hill
关键词
D O I
10.1103/PhysRevLett.42.508
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report the diffraction of He atoms at the Si(111) 7×7 reconstructed surface. The atom diffraction patterns consist of numerous sharp peaks filling out the seventh-order net observed by low-energy electron diffraction (LEED). In contrast to low-energy electron diffraction, the diffraction intensities in this seventh-order net are determined by only the outermost exposed layer of silicon atoms. These results should be sufficient to allow a semiclassical scattering calculation to test critically the various structural models which have been proposed for this reconstruction. © 1979 The American Physical Society.
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页码:508 / 511
页数:4
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