NOVEL FABRICATION METHOD FOR NANOMETER-SCALE SILICON DOTS AND WIRES

被引：72

作者：

CHEN, GS

BOOTHROYD, CB

HUMPHREYS, CJ

机构：

[1] Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, Pembroke Street

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 16期

关键词：

D O I：

10.1063/1.109500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have discovered that a thin film of SiO2 can be directly reduced to Si under electron beam irradiation. The application of this effect to the fabrication of nanometer-sized Si dots and wires is demonstrated. In particular, if SiO2 is irradiated with a high intensity 100 keV electron beam of nanometer scale, then a column of Si is formed which can be as small as 2 nm in diameter. If the beam is moved in a straight line, then a very thin wire of Si is formed. These columns and wires are formed directly under electron irradiation with a dose of greater-than-or-equal-to 3 x 10(9) C m-2 and no resists or chemical development are required.

引用

页码：1949 / 1951

页数：3

共 15 条

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Ahmed H., COMMUNICATION

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