FORMATION AND PHOTOLUMINESCENCE OF QUANTUM WIRE STRUCTURES ON VICINAL (110) GAAS SUBSTRATES BY MBE

被引：46

作者：

INOUE, K ^{[1
]}

KIMURA, K ^{[1
]}

MAEHASHI, K ^{[1
]}

HASEGAWA, S ^{[1
]}

NAKASHIMA, H ^{[1
]}

IWANE, M ^{[1
]}

MATSUDA, O ^{[1
]}

MURASE, K ^{[1
]}

机构：

[1] OSAKA UNIV, FAC SCI, DEPT PHYS, TOYONAKA, OSAKA 560, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90787-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Quantum wire structures are formed by the molecular beam epitaxial growth of AlAs-AlGaAs-AlAs quantum well on the large-growth-step structures of superlattices on vicinal (110) GaAs substrates. From the PL spectra, Al compositions in the wire are estimated to be much smaller than those in the well layers. The PL is polarized parallel to the wire direction. The observed large polarization supports the carrier confinement to the quantum wire structures.

引用

页码：1041 / 1044

页数：4

共 6 条

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[No title captured]

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