MBE GROWTH OF ALGAAS-GAAS SUPERLATTICES ON GAAS (110) SUBSTRATES

Molecular beam epitaxial growth of AlGaAs/GaAs superlattices on cleaved GaAs (110) surfaces and vicinal (110) surfaces misoriented 6' toward (111) B have been found to produce quantum well wire-like structures. On the latter surfaces, these structures are coherently aligned toward 〈110〉 direction with almost equal spacing. SEM observations and EPMA measurements confirm that the (111) A facet is formed during growth and the AlAs mole fraction of AlGaAs layers depends on the orientation of growth surfaces. These two phenomena are considered to induce these quantum well wire-like structures. © 1990.