NEW METHOD FOR DETERMINATION OF ENERGY-DISTRIBUTION OF SURFACE-STATES IN THE SEMICONDUCTOR BAND-GAP - XPS MEASUREMENTS UNDER BIASES

被引：24

作者：

KOBAYASHI, H ^{[1
]}

MORI, T ^{[1
]}

NAMBA, K ^{[1
]}

NAKATO, Y ^{[1
]}

机构：

[1] OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 92卷 / 03期

关键词：

D O I：

10.1016/0038-1098(94)90886-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The energy distribution of surface states in the semiconductor band-gap has been obtained spectroscopically from measurements of X-ray photoelectron spectra (XPS) under biases. The XPS measurements are performed for [ca. 30 angstrom-thick Pt/ca. 25 angstrom-thick oxide/p-InP (100)] MIS diodes. The difference in binding energy between the In(3d) and Pt(4f) peaks, E(In)-E(Pt), is changed by applying biases, because of accumulation of charges in the surface states. The energy distribution of the surface states is determined by analyzing the amount of the bias-induced shift in E(In)-E(Pt). The density of the surface states is high near the mid-gap, near the conduction band minimum and near the valence band maximum.

引用

页码：249 / 254

页数：6

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