PRECIPITATE IDENTIFICATION IN LEC-GROWN SI-DOPED GAAS

被引:15
作者
COCKAYNE, B [1 ]
MACEWAN, WR [1 ]
HOPE, DAO [1 ]
HARRIS, IR [1 ]
SMITH, NA [1 ]
机构
[1] UNIV BIRMINGHAM,DEPT MET & MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
关键词
D O I
10.1016/0022-0248(88)90338-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
SEMICONDUCTING GALLIUM COMPOUNDS
引用
收藏
页码:6 / 12
页数:7
相关论文
共 13 条
[1]  
BASS SJ, 1967, I PHYS C SER, V3, P41
[2]   PRECIPITATE IDENTIFICATION IN TI-DOPED, CR-DOPED AND NI-DOPED INP SINGLE-CRYSTALS [J].
COCKAYNE, B ;
MACEWAN, WR ;
HARRIS, IR ;
SMITH, NA .
JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) :251-258
[3]   PRECIPITATE IDENTIFICATION IN MN-DOPED INP SINGLE-CRYSTALS [J].
COCKAYNE, B ;
MACEWAN, WR ;
HARRIS, IR ;
SMITH, NA .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :637-640
[4]   THE IDENTIFICATION OF PRECIPITATES IN V-DOPED INP SINGLE-CRYSTALS [J].
COCKAYNE, B ;
MACEWAN, WR ;
COURTNEY, SJ ;
HARRIS, IR ;
SMITH, NA .
JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :610-612
[5]   PRECIPITATE IDENTIFICATION IN GE-DOPED LEC GROWN INP SINGLE-CRYSTALS [J].
COCKAYNE, B ;
MACEWAN, WR ;
HARRIS, IR ;
SMITH, NA .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1984, 3 (11) :990-992
[6]   PHASE IDENTIFICATION IN FE-DOPED GAAS SINGLE-CRYSTALS [J].
HARRIS, IR ;
SMITH, NA ;
COCKAYNE, B ;
MACEWAN, WR .
JOURNAL OF CRYSTAL GROWTH, 1987, 82 (03) :450-458
[7]   PRECIPITATE IDENTIFICATION IN CO-DOPED INP [J].
HARRIS, IR ;
SMITH, NA ;
COCKAYNE, B ;
MACEWAN, WR .
JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :115-120
[8]   PHASE IDENTIFICATION IN CU-DOPED INP SINGLE-CRYSTALS [J].
HARRIS, IR ;
SMITH, NA ;
COCKAYNE, B ;
MACEWAN, WR .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (02) :233-241
[9]   UNDOPED SEMI-INSULATING LEC GAAS - A MODEL AND A MECHANISM [J].
OLIVER, JR ;
FAIRMAN, RD ;
CHEN, RT ;
YU, PW .
ELECTRONICS LETTERS, 1981, 17 (22) :839-841
[10]   THE IDENTIFICATION OF PRECIPITATE PHASES IN FE-DOPED INP SINGLE-CRYSTALS [J].
SMITH, NA ;
HARRIS, IR ;
COCKAYNE, B ;
MACEWAN, WR .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) :517-522