MAGNETOTRANSPORT STUDY IN RESTRICTED MOS INVERSION-LAYERS

被引:3
作者
OHATA, A
TORIUMI, A
机构
[1] ULSI Research Center, Toshiba Corporation 1, Saiwai-ku, Kawasaki, 210, Komukai Toshiba-cho
关键词
D O I
10.1016/0039-6028(92)90327-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigated the transport properties in narrow channel Si-MOSFETs in the strongly localized regime, where aperiodic conductance oscillations have been observed as a function of gate voltage. We focus our attention upon the well defined peak structure in the oscillatory conductance and discuss it from the viewpoint of variable range hopping between a particular pair of hopping sites in a very narrow inversion channel. We also studied magnetostructure up to 9 T at 4.2 K and found a large positive magnetoconductance (approximately 20%) in a magnetic field perpendicular to the sample in the strongly localized regime. We attribute this large positive magnetoconductance to interference between restricted hopping paths in a very narrow conduction channel.
引用
收藏
页码:157 / 161
页数:5
相关论文
共 9 条
[1]  
Ando T., 1982, REV MOD PHYS, V54, P499
[2]   ELECTRONIC TRANSPORT IN SMALL STRONGLY LOCALIZED STRUCTURES [J].
FOWLER, AB ;
WAINER, JJ ;
WEBB, RA .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (03) :372-383
[3]   MAGNETORESISTANCE OF THE 2-D IMPURITY BAND IN SILICON INVERSION-LAYERS [J].
HARTSTEIN, A ;
FOWLER, AB ;
WOO, KC .
PHYSICA B & C, 1983, 117 (MAR) :655-657
[4]   VARIABLE-RANGE HOPPING IN FINITE ONE-DIMENSIONAL WIRES [J].
LEE, PA .
PHYSICAL REVIEW LETTERS, 1984, 53 (21) :2042-2045
[5]   IMPURITY CONDUCTION AT LOW CONCENTRATIONS [J].
MILLER, A ;
ABRAHAMS, E .
PHYSICAL REVIEW, 1960, 120 (03) :745-755
[6]  
NGUEN VL, 1985, ZH EKSP TEOR FIZ, V62, P1021
[7]   OBSERVATION OF RANDOM TELEGRAPH SIGNALS - ANOMALOUS NATURE OF DEFECTS AT THE SI/SIO2 INTERFACE [J].
OHATA, A ;
TORIUMI, A ;
IWASE, M ;
NATORI, K .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (01) :200-204
[8]  
SHKLOVSKII BI, 1984, ELECTRONIC PROPERTIE
[9]   HOPPING TRANSPORT IN DELTA-DOPING LAYERS IN GAAS [J].
YE, QY ;
SHKLOVSKII, BI ;
ZRENNER, A ;
KOCH, F ;
PLOOG, K .
PHYSICAL REVIEW B, 1990, 41 (12) :8477-8484