LOW-TEMPERATURE FORMATION OF METAL MOLECULAR-BEAM EPITAXY-GAAS(100) INTERFACES - APPROACHING IDEAL CHEMICAL AND ELECTRONIC LIMITS

被引：61

作者：

VITURRO, RE

CHANG, S

SHAW, JL

MAILHIOT, C

BRILLSON, LJ

TERRASI, A

HWU, Y

MARGARITONDO, G

KIRCHNER, PD

WOODALL, JM

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584791

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1007 / 1012

页数：6

共 45 条

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