TRANSIENT-RESPONSE OF N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS DURING TURNON AT 10-25-DEGREES-K

被引：31

作者：

TEWKSBURY, SK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 05期

关键词：

D O I：

10.1063/1.331131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3865 / 3872

页数：8

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