GATE OXIDE DEGRADATION IN THE POLYSILICON DOPING ACTIVATION PROCESS

[1] ARIENZO M, 1983, ELECTROCHEMICAL SOC, V831, P605

[2] COSWAY RG, 1984, ELECTROCHEMICAL SOC, V842, P427

[3] DIGIACCOMO G, 1984, APR IEEE REL PHYS S

[4] SILICON GATE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &

[5] DIFFUSION IN SILICON FROM A SPIN-ON HEAVILY PHOSPHORUS-DOPED OXIDE SOURCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2299 - 2302

[6] FLOWERS DL, 1983, ELECTROCHEMICAL SOC, V831, P651

[7] BORON-DIFFUSION IN POLYCRYSTALLINE SILICON LAYERS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 529 - 532

[8] LOSEE DL, 1983, ELECTROCHEMICAL SOC, V831, P597

[9] OSBURN CM, 1982, ELECTROCHEM SOC, V827, P354

[10] METAL-NITRIDE-OXIDE-SILICON FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED GATES [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 653 - +

[1] ARIENZO M, 1983, ELECTROCHEMICAL SOC, V831, P605

[2] COSWAY RG, 1984, ELECTROCHEMICAL SOC, V842, P427

[3] DIGIACCOMO G, 1984, APR IEEE REL PHYS S

[4] SILICON GATE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &

[5] DIFFUSION IN SILICON FROM A SPIN-ON HEAVILY PHOSPHORUS-DOPED OXIDE SOURCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2299 - 2302

[6] FLOWERS DL, 1983, ELECTROCHEMICAL SOC, V831, P651

[7] BORON-DIFFUSION IN POLYCRYSTALLINE SILICON LAYERS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 529 - 532

[8] LOSEE DL, 1983, ELECTROCHEMICAL SOC, V831, P597

[9] OSBURN CM, 1982, ELECTROCHEM SOC, V827, P354

[10] METAL-NITRIDE-OXIDE-SILICON FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED GATES [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 653 - +