FEMTOSECOND SPECTROSCOPY IN AMORPHOUS-SILICON AND SILICON-GERMANIUM ALLOYS

被引：8

作者：

FAUCHET, PM ^{[1
]}

HULIN, D ^{[1
]}

MIGUS, A ^{[1
]}

ANTONETTI, A ^{[1
]}

CONDE, JP ^{[1
]}

WAGNER, S ^{[1
]}

机构：

[1] ECOLE POLYTECH,ENSTA,OPT APPL LAB,F-91120 PALAISEAU,FRANCE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90034-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：145 / 148

页数：4

共 10 条

[1]

ADLER D, 1986, MAT RES SOC S P, V70

[2]

ALJISHI S, 1986, MATER RES SOC S P, V70, P269

[3] GRADUAL SURFACE TRANSITIONS ON SEMICONDUCTORS INDUCED BY MULTIPLE PICOSECOND LASER-PULSES [J].

FAUCHET, PM .

PHYSICS LETTERS A, 1983, 93 (03) :155-157

[4] INITIAL-STAGES OF TRAPPING IN A-SI-H OBSERVED BY FEMTOSECOND SPECTROSCOPY [J].

FAUCHET, PM ;

HULIN, D ;

MIGUS, A ;

ANTONETTI, A ;

KOLODZEY, J ;

WAGNER, S .

PHYSICAL REVIEW LETTERS, 1986, 57 (19) :2438-2441

[5]

FAUCHET PM, UNPUB

[6]

FAUCHET PM, 1987, 18TH INT C PHYS SEM, V2, P1029

[7] PROPERTIES OF A-SI,GE-H,F ALLOYS PREPARED BY RF GLOW-DISCHARGE IN AN ULTRAHIGH-VACUUM REACTOR [J].

KOLODZEY, J ;

ALJISHI, S ;

SCHWARZ, R ;

SLOBODIN, D ;

WAGNER, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :2499-2504

[8] SPECTROSCOPY OF HOT CARRIERS IN SEMICONDUCTORS [J].

LYON, SA .

JOURNAL OF LUMINESCENCE, 1986, 35 (03) :121-154

[9] FEMTOSECOND SPECTROSCOPY WITH HIGH-POWER TUNABLE OPTICAL PULSES [J].

MIGUS, A ;

ANTONETTI, A ;

ETCHEPARE, J ;

HULIN, D ;

ORSZAG, A .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1985, 2 (04) :584-594

[10] PICOSECOND TRAPPING OF PHOTOCARRIERS IN AMORPHOUS-SILICON [J].

VARDENY, Z ;

STRAIT, J ;

TAUC, J .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :580-582

← 1 →