GRADUAL SURFACE TRANSITIONS ON SEMICONDUCTORS INDUCED BY MULTIPLE PICOSECOND LASER-PULSES

[1] BLOSSE A, 1979, I PHYS C SER, V59, P521

[2] SURFACE RIPPLES ON SILICON AND GALLIUM-ARSENIDE UNDER PICOSECOND LASER ILLUMINATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (09) : 824 - 826

[3] FAUCHET PM, 1982, UNPUB 3RD TOP M PIC

[4] GUOSHENG Z, UNPUB PHYS REV B

[5] SURFACE-TOPOGRAPHY OF LASER ANNEALED SILICON [J]. SOLID STATE COMMUNICATIONS, 1982, 43 (03) : 203 - 206

[6] PERIODIC SURFACE RIPPLES IN LASER-TREATED ALUMINUM AND THEIR USE TO DETERMINE ABSORBED POWER [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4882 - 4884

[7] JELLISON GE, 1982, APPL PHYS LETT, V41, P180, DOI 10.1063/1.93454

[8] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 864 - 866

[9] PICOSECOND LASER-PULSE IRRADIATION OF CRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 729 - 731

[10] RAMAN STUDY OF LASER ANNEALED SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (11) : 805 - 808

[1] BLOSSE A, 1979, I PHYS C SER, V59, P521

[2] SURFACE RIPPLES ON SILICON AND GALLIUM-ARSENIDE UNDER PICOSECOND LASER ILLUMINATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (09) : 824 - 826

[3] FAUCHET PM, 1982, UNPUB 3RD TOP M PIC

[4] GUOSHENG Z, UNPUB PHYS REV B

[5] SURFACE-TOPOGRAPHY OF LASER ANNEALED SILICON [J]. SOLID STATE COMMUNICATIONS, 1982, 43 (03) : 203 - 206

[6] PERIODIC SURFACE RIPPLES IN LASER-TREATED ALUMINUM AND THEIR USE TO DETERMINE ABSORBED POWER [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4882 - 4884

[7] JELLISON GE, 1982, APPL PHYS LETT, V41, P180, DOI 10.1063/1.93454

[8] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 864 - 866

[9] PICOSECOND LASER-PULSE IRRADIATION OF CRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 729 - 731

[10] RAMAN STUDY OF LASER ANNEALED SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (11) : 805 - 808