CHARACTERIZATION OF SILICON LAYERS VIA GUIDED WAVE OPTICS

被引:15
作者
OLIVIER, M
PEUZIN, JC
机构
关键词
D O I
10.1063/1.90063
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:386 / 388
页数:3
相关论文
共 9 条
[1]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[2]   STRESS-INDUCED ANISOTROPY IN ELECTRICAL PROPERTIES OF SI-AL2O3 [J].
HUGHES, AJ .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2849-2863
[3]  
JAUSSAUD PC, UNPUBLISHED
[4]  
LANDOLTBORNSTEI, 1966, NEW SERIES GROUP 3, V1, P135
[5]  
MAHTSON H, 1962, J OPT SOC AM, V52, P1377
[6]  
NYE JF, 1957, PHYS PROPERTIES CRYS, P261
[7]   ANISOTROPY IN ELECTRICAL PROPERTIES OF N-TYPE (221) SI-(11BAR22) AL2O3 [J].
THORSEN, AC ;
HUGHES, AJ .
APPLIED PHYSICS LETTERS, 1972, 21 (12) :579-&
[8]   MODES OF PROPAGATING LIGHT WAVES IN THIN DEPOSITED SEMICONDUCTOR FILMS [J].
TIEN, PK ;
ULRICH, R ;
MARTIN, RJ .
APPLIED PHYSICS LETTERS, 1969, 14 (09) :291-&
[9]   MEASUREMENT OF THIN-FILM PARAMETERS WITH A PRISM COUPLER [J].
ULRICH, R ;
TORGE, R .
APPLIED OPTICS, 1973, 12 (12) :2901-2908