CONSEQUENCES ON THE SCHOTTKY-BARRIER OF A SPATIAL-DISTRIBUTION OF INTERFACE STATES

被引：5

作者：

LU, GN

BARRET, C

NEFFATI, T

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1987年 / 22卷 / 10期

关键词：

D O I：

10.1051/rphysap:0198700220100116900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1169 / 1175

页数：7

共 17 条

[1] INTERFACE STATES IN A CLEAVED METAL-SILICON JUNCTION [J].

BARRET, C ;

VAPAILLE, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4217-4222

[2] EXPERIMENTAL-EVIDENCE OF GAP STATES IN METAL GAAS INTERFACES [J].

CHEKIR, F ;

BARRET, C .

SURFACE SCIENCE, 1986, 168 (1-3) :838-845

[3] A STUDY OF INTERFACE STATES IN METAL-GAAS (110) STRUCTURES BY SCHOTTKY CAPACITANCE SPECTROSCOPY [J].

CHEKIR, F ;

BARRET, C ;

VAPAILLE, A .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6474-6480

[4] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[5] SURFACE VACANCIES IN INP AND GAAIAS [J].

DAW, MS ;

SMITH, DL .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :690-692

[6] A MICROSCOPIC MODEL OF METAL-SEMICONDUCTOR CONTACTS [J].

DUKE, CB ;

MAILHIOT, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1170-1177

[7]

Lu G. J., UNPUB

[8]

LU GN, 1986, THESIS ORSAY

[9] CAPACITANCE SPECTROSCOPY OF LOCALIZED STATES AT METAL-SEMICONDUCTOR INTERFACES .2. EXPERIMENTS ABOUT AG, AU, AND NI ON CRYSTALLINE (111) SI SURFACES [J].

MURET, P .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6300-6307

[10] FERMI LEVEL PINNING BY INTERFACE STATES - A CALCULATION OF THE HEIGHT AND THE SHAPE OF THE SCHOTTKY-BARRIER [J].

PALAU, JM ;

ISMAIL, A ;

LASSABATERE, L .

SOLID-STATE ELECTRONICS, 1985, 28 (05) :499-508

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