ANALYSIS AND MEASUREMENT OF SPEED AND LINEARITY OF SILICON PHOTODIODES FOR MEASURING SHORT LASER PULSES

被引：10

作者：

EDWARDS, JG ^{[1
]}

JEFFERIES, R ^{[1
]}

机构：

[1] NATL PHYS LAB, TEDDINGTON, MIDDLESEX, ENGLAND

来源：

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1973年 / 6卷 / 09期

关键词：

D O I：

10.1088/0022-3735/6/9/017

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：841 / 853

页数：13

共 10 条

[1] RESPONSE TIME OF F 4000 BIPLANAR PHOTOCELL IN VARIOUS HOLDERS [J].

EDWARDS, JG ;

JEFFERIE.R .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1969, 2 (12) :1126-&

[2] AN AUTOMATIC LINEARITY TESTER FOR PHOTODETECTORS [J].

EDWARDS, JG ;

JEFFERIES, R .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1970, 3 (07) :518-+

[3]

GEORGIYE.EA, 1971, RADIO ENG ELECTRON P, V16, P1978

[4]

GOODMAN AD, 1971, THESIS BRIGHTON POLY

[5]

JUNG HJ, 1971, Z ANGEW PHYSIK, V30, P338

[6]

MASLOWSKI S, 1972, APPL OPTICS, V11, P1680

[7] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J].

PRIOR, AC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) :175-180

[8]

Runyan W.R., 1965, SILICON SEMICONDUCTO

[9] STUDY OF INITIAL PHOTOCURRENT DUE TO PULSED LIGHT ABSORBED IN FINITE THICKNESS [J].

SEKI, H .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1144-&

[10] REVERSE-BIAS CHARACTERISTICS OF A P+-N-N+ PHOTODIODE [J].

TANDON, JC ;

ROULSTON, DJ ;

CHAMBERLAIN, SG .

SOLID-STATE ELECTRONICS, 1972, 15 (06) :669-+

← 1 →