VIBRATIONAL CORRELATION-FUNCTIONS FOR SI AND GE

被引:11
作者
STEIF, A
TIERSTEN, SC
YING, SC
机构
来源
PHYSICAL REVIEW B | 1987年 / 35卷 / 02期
关键词
D O I
10.1103/PhysRevB.35.857
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:857 / 859
页数:3
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共 8 条
[1]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[2]   SPECIAL POINTS IN BRILLOUIN ZONE [J].
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753
[3]   THE INFLUENCE OF SURFACE RECONSTRUCTION ON THE INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY [J].
GOSSMANN, HJ ;
FELDMAN, LC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1065-1066
[4]   EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].
KEATING, PN .
PHYSICAL REVIEW, 1966, 145 (02) :637-&
[5]  
Maradudin A A, 1971, THEORY LATTICE DYNAM
[6]   ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J].
MARTIN, RM .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :4005-+
[7]   VIBRATIONAL PROPERTIES OF THE SI(100)2X1 SURFACE [J].
TIERSTEN, S ;
YING, SC ;
REINECKE, TL .
PHYSICAL REVIEW B, 1986, 33 (06) :4062-4076
[8]   EFFECTIVE POTENTIALS FOR KINETIC PROCESSES ON SEMICONDUCTOR SURFACES [J].
YING, SC ;
REINECKE, TL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :573-575