ELECTRIC-FIELD ENHANCEMENT OF ESCAPE PROBABILITY ON NEGATIVE ELECTRON-AFFINITY SURFACES

被引：12

作者：

HOWORTH, JR ^{[1
]}

HARMER, AL ^{[1
]}

TRAWNY, EWL ^{[1
]}

HOLTOM, R ^{[1
]}

SHEPPARD, CJ ^{[1
]}

机构：

[1] ENGLISH ELECT VALVE CO LTD,CHELMSFORD,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 03期

关键词：

D O I：

10.1063/1.1654828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：123 / 124

页数：2

共 11 条

[1]

BARTELINK DT, 1960, PHYS REV, V130, P972

[2]

COCHRANE JA, PRIVATE COMMUNICATIO

[3] ENHANCEMENT OF PHOTOELECTRIC QUANTUM EFFICIENCY IN NEAR INFRARED [J].

CROWE, KR ;

GUMNICK, JL .

APPLIED PHYSICS LETTERS, 1967, 11 (08) :249-&

[4] PHOTOELECTRON SURFACE ESCAPE PROBABILITY OF (GA,IN)AS-CS-O IN 0.9 TO - 1.6 MUM RANGE [J].

FISHER, DG ;

ENSTROM, RE ;

ESCHER, JS ;

WILLIAMS, BF .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3815-&

[5]

GARFIELD BR, PRIVATE COMMUNICATIO

[6] CS-O NEGATIVE ELECTRON-AFFINITY SURFACES ON SILICON [J].

HOWORTH, JR ;

HOLTOM, R ;

TRAWNY, EW ;

HARMER, AL .

APPLIED PHYSICS LETTERS, 1972, 21 (07) :316-&

[7] DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS [J].

JAMES, LW ;

ANTYPAS, GA ;

EDGECUMBE, J ;

MOON, RL ;

BELL, RL .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4976-+

[8]

KOHN ES, 1973, IEEE T ELECTRON DEVI, VED20, P321

[9]

KRESSEL H, TO BE PUBLISHED

[10] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

LEE, CA ;

KLEIMACK, JJ ;

BATDORF, RL ;

WIEGMANN, W ;

LOGAN, RA .

PHYSICAL REVIEW, 1964, 134 (3A) :A761-+

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