TIGHT-BINDING MODELS FOR NON IDEAL SEMICONDUCTOR INTERFACES

被引：26

作者：

MUNOZ, MC

VELASCO, VR

GARCIAMOLINER, F

机构：

来源：

PROGRESS IN SURFACE SCIENCE | 1987年 / 26卷 / 1-4期

关键词：

D O I：

10.1016/0079-6816(87)90053-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：117 / 133

页数：17

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