THE EFFECTIVE SURFACE RECOMBINATION OF A GERMANIUN SURFACE WITH A FLOATING BARRIER

被引：21

作者：

MOORE, AR

WEBSTER, WM

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1955年 / 43卷 / 04期

关键词：

D O I：

10.1109/JRPROC.1955.278190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：427 / 435

页数：9

共 14 条

[1] THE SURFACE-BARRIER TRANSISTOR .1. PRINCIPLES OF THE SURFACE-BARRIER TRANSISTOR
BRADLEY, WE
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12): : 1702 - 1706
[2] SURFACE CONDUCTION CHANNEL PHENOMENA IN GERMANIUM
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[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (09): : 1371 - 1376
[3] PROPERTIES OF SILICON AND GERMANIUM
CONWELL, EM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1327 - 1337
[4] P-N JUNCTIONS PREPARED BY IMPURITY DIFFUSION
HALL, RN
DUNLAP, WC
[J]. PHYSICAL REVIEW, 1950, 80 (03): : 467 - 468
[5] A DEVELOPMENTAL GERMANIUM P-N-P-JUNCTION TRANSISTOR
LAW, RR
MUELLER, CW
PANKOVE, JI
ARMSTRONG, LD
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1352 - 1357
[6] LEDERHANDLER S, UNPUBLISHED
[7] CHANNELS AND EXCESS REVERSE CURRENT IN GROWN GERMANIUM P-N JUNCTION DIODES
MCWHORTER, AL
KINGSTON, RH
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (09): : 1376 - 1380
[8] THE EFFECT OF JUNCTION SHAPE AND SURFACE RECOMBINATION ON TRANSISTOR CURRENT GAIN
MOORE, AR
PANKOVE, JI
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (06): : 907 - 913
[9] THE SURFACE-BARRIER TRANSISTOR .5. THE PROPERTIES OF METAL TO SEMICONDUCTOR CONTACTS
SCHWARZ, RF
WALSH, JF
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12): : 1715 - 1720
[10] P-N JUNCTION TRANSISTORS
SHOCKLEY, W
SPARKS, M
TEAL, GK
[J]. PHYSICAL REVIEW, 1951, 83 (01): : 151 - 162