SUBMILLIWATT OPTICAL BISTABILITY IN A COATED INGAAS/INP MULTIQUANTUM-WELL WAVE-GUIDE FABRY-PEROT CAVITY

被引：4

作者：

NEILSON, DT

EHRLICH, JE

MEREDITH, P

WALKER, AC

KENNEDY, GT

GRANT, RS

ROBERTS, PD

SIBBETT, W

HOPKINSON, M

PATE, M

机构：

[1] UNIV ST ANDREWS,DEPT PHYS & ASTRON,ST ANDREWS KY16 9SS,SCOTLAND

[2] UNIV SHEFFIELD,DEPT ELECT & ELECTR ENGN,SERC III-V SEMICOND FACIL,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 17期

关键词：

OPTICAL BISTABILITY; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19931024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The observation of submilliwatt switching and optical bistability in an InGaAs/InP MQW waveguide Fabry-Perot cavity using diode laser sources is reported. Second-order bistability was also observed, with a higher power colour-centre laser source, showing that optically-induced phase shifts of greater than 2x can be achieved at power levels of less than 5 mW. A switch contrast of approximately 3:1 was observed.

引用

页码：1537 / 1539

页数：3

共 6 条

[1] CARRIER LIFETIMES IN MBE AND MOCVD INGAAS QUANTUM-WELLS [J].