POINT-DEFECT DOPANT DIFFUSION CONSIDERATIONS FOLLOWING PREAMORPHIZATION OF SILICON VIA SI+ AND GE+ IMPLANTATION

被引：40

作者：

AJMERA, AC ^{[1
]}

ROZGONYI, GA ^{[1
]}

FAIR, RB ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.99292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：813 / 815

页数：3

共 12 条

[1]

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[2]

CALDER ID, 1985, ENERGY BEAM SOLID IN, V35, P353

[3]

CARTER C, 1984, APPL PHYS LETT, V44, P4

[4] MODELING OF DOPANT DIFFUSION DURING RAPID THERMAL ANNEALING [J].

FAIR, RB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :926-932

[5]

FAIR RB, 1985, ADV APPLICATIONS ION, V530, P88

[6]

FAIR RB, 1987, IEDM, P260

[7]

OZTURK MC, UNPUB

[8]

ROZGONYI GA, 1986, SEMICONDUCTOR SILICO, P696

[9] GERMANIUM IMPLANTATION INTO SILICON - AN ALTERNATE PRE-AMORPHIZATION RAPID THERMAL ANNEALING PROCEDURE FOR SHALLOW JUNCTION FORMATION [J].

SADANA, DK ;

MASZARA, W ;

WORTMANN, JJ ;

ROZGONYI, GA ;

CHU, WK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) :943-945

[10] RETARDED AND ENHANCED DOPANT DIFFUSION IN SILICON RELATED TO IMPLANTATION-INDUCED EXCESS VACANCIES AND INTERSTITIALS [J].

SERVIDORI, M ;

ANGELUCCI, R ;

CEMBALI, F ;

NEGRINI, P ;

SOLMI, S ;

ZAUMSEIL, P ;

WINTER, U .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1834-1840

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