RESONANT MAGNETOTUNNELING OF ELECTRONS AND HOLES IN A P-I-N-DIODE DEVICE INCORPORATING A DOUBLE BARRIER STRUCTURE

被引：13

作者：

MARTIN, PM

HAYDEN, RK

WHITE, CRH

HENINI, M

EAVES, L

MAUDE, DK

PORTAL, JC

HILL, G

PATE, MA

机构：

[1] CNRS,SNCI,F-38042 GRENOBLE,FRANCE

[2] INST NATL SCI APPL,PHYS SOLIDES LAB,CNRS,F-31077 TOULOUSE,FRANCE

[3] UNIV SHEFFIELD,DEPT ELECTR ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We observe resonant tunnelling of electrons and holes in a GaAs p-i-n diode incorporating two AlAs barriers in the undoped region. Peaks due to the HH1, LH1, E1 and HH2 (E = electron, LH = light hole, HH = heavy hole) resonances are observed, in that order of increasing voltage. The voltage separation of the LH1 and E1 resonance is significantly larger than expected from a simple quantum mechanical model due to an interaction effect involving resonant buildup of electron space charge in the quantum well. High magnetic fields B parallel-to J and B perpendicular to J are used to investigate the device and confirm the assignment of the resonances.

引用

收藏

页码：B456 / B459

页数：4

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