PHOTOLUMINESCENCE OF SI MICROCRYSTALS EMBEDDED IN SIO2 GLASS-FILMS

被引:45
作者
KOHNO, K [1 ]
OSAKA, Y [1 ]
TOYOMURA, F [1 ]
KATAYAMA, H [1 ]
机构
[1] HIROSHIMA UNIV,FAC ENGN,DEPT ELECT ENGN,HIGASHIHIROSHIMA 724,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12A期
关键词
PHOTOLUMINESCENCE; SI MICROCRYSTAL EMBEDDED SIO2; OPTICAL ABSORPTION;
D O I
10.1143/JJAP.33.6616
中图分类号
O59 [应用物理学];
学科分类号
摘要
Si microcrystals were doped into SiO2 glass film by the rf magnetron sputtering technique. The average diameter of Si microcrystals was estimated by transmission electron microscopy observation. The dependence of photoluminescence of Si microcrystals on the average diameter is discussed in detail. The absorption of Si microcrystals and the photoluminescence for the larger diameter (greater than or equal to 3 nm) seem to be determined by the bulk property of a quantum dot. For the smaller diameter(less than or equal to 3 nm), surface effects of a quantum dot seem to play a role in the photoluminescence. The experimental line shape of the PL spectrum was explained theoretically by the inhomogeneous broadening of the size distribution function of a quantum dot for the larger diameter (>3 nm).
引用
收藏
页码:6616 / 6622
页数:7
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