SILICON TAKE-UP BY ALUMINUM CONDUCTORS LAYERED WITH REFRACTORY-METALS

被引：8

作者：

HINODE, K

OWADA, N

TERADA, T

IWATA, S

机构：

[1] HITACHI LTD,CTR DEVICE DEV,KOKUBUNJI,TOKYO 185,JAPAN

[2] HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO 187,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 03期

关键词：

D O I：

10.1109/T-ED.1987.22982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：700 / 705

页数：6

共 6 条

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GARDNER, DS ;

MICHALKA, TL ;

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BARBEE, TW ;

MCVITTIE, JP ;

MEINDL, JD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) :94-103

[2] KINETICS OF COMPOUND FORMATION IN THIN-FILM COUPLES OF AL AND TRANSITION-METALS [J].

HOWARD, JK ;

LEVER, RF ;

SMITH, PJ ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :68-71

[3] INTERMETALLIC COMPOUNDS OF AL AND TRANSITIONS METALS - EFFECT OF ELECTROMIGRATION IN 1-2-MUM-WIDE LINES [J].

HOWARD, JK ;

WHITE, JF ;

HO, PS .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4083-4093

[4]

RAMAN A, 1965, Z METALLKD, V56, P44

[5]

SHEN BW, 1985, 2ND P INT IEEE VLSI, P114

[6]

Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359

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