LOCAL DENSITY OF STATES FOR THE OVERLAYER OF AL CHEMISORBED ON THE SI (111) SURFACE

被引：5

作者：

NISHIDA, M ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 91卷 / 01期

关键词：

D O I：

10.1002/pssb.2220910146

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

[No abstract available]

引用

页码：K5 / K8

页数：4

共 10 条

[1]

APPELBAUM JA, 1974, PHYSICS SEMICONDUCTO, P681

[2] ELECTRONIC-STRUCTURE OF AL CHEMISORBED ON SI(111) SURFACE [J].

CHELIKOWSKY, JR .

PHYSICAL REVIEW B, 1977, 16 (08) :3618-3627

[3] ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY OF ADSORPTION OF ALUMINUM ON SILICON (111) 7 X 7 SURFACE [J].

CHUNG, YW ;

SIEKHAUS, W ;

SOMORJAI, G .

PHYSICAL REVIEW B, 1977, 15 (02) :959-963

[4] SURFACE REACTIONS OF SILICON WITH ALUMINUM AND WITH INDIUM [J].

LANDER, JJ ;

MORRISON, J .

SURFACE SCIENCE, 1964, 2 :553-565

[5] SURFACE SPECTROSCOPY OF SCHOTTKY-BARRIER FORMATION ON SI(111) 7X7 - PHOTOEMISSION STUDIES OF FILLED SURFACE-STATES AND BAND BENDING [J].

MARGARITONDO, G ;

ROWE, JE ;

CHRISTMAN, SB .

PHYSICAL REVIEW B, 1976, 14 (12) :5396-5403

[6] CLUSTER MODEL CALCULATION FOR THREEFOLD COORDINATED SITE CHEMISORPTION OF CL ON GE(111) SURFACE BY EXTENDED HUCKEL THEORY [J].

NISHIDA, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 85 (02) :K69-K72

[7] CLUSTER MODEL CALCULATIONS FOR CL CHEMISORBED SI AND GE (111) SURFACES BY ITERATIVE EXTENDED HUCKEL THEORY [J].

NISHIDA, M ;

ISHII, N ;

SHIMIZU, T .

PHYSICS LETTERS A, 1977, 60 (02) :148-150

[8]

NISHIDA M, UNPUBLISHED

[9]

Pauling L., 1960, NATURE CHEM BOND

[10] ELECTRON-ENERGY LOSS SPECTROSCOPY OF SI(111)-SIMPLE-METAL INTERFACE [J].

ROWE, JE ;

MARGARITONDO, G ;

CHRISTMAN, SB .

PHYSICAL REVIEW B, 1977, 15 (04) :2195-2201

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