Etching characteristics in helicon wave plasma

被引：17

作者：

Kitagawa, Hideo ^{[1
]}

Tsunoda, Akira ^{[1
]}

Shindo, Haruo ^{[1
]}

Horiike, Yasuhiro ^{[1
]}

机构：

[1] Hiroshima Univ, Fac Engn, Dept Phys Elect, Higashihiroshima 724, Japan

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 1993年 / 2卷 / 01期

关键词：

D O I：

10.1088/0963-0252/2/1/003

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

The Si etching characteristic in helicon wave plasma was studied. The Si etch rate showed a very critical pressure dependence. Low-temperature etching at liquid-nitrogen temperature offered directional etching with a rate of 3500 angstrom min(-1). The etching uniformity was also studied on the two points of the magnetic field and the tube diameter.

引用

页码：11 / 13

页数：3

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