PIEZOELECTRIC SCATTERING IN QUANTIZED SURFACE-LAYERS IN SEMICONDUCTORS

被引：39

作者：

BASU, PK

NAG, BR

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 10期

关键词：

D O I：

10.1088/0022-3719/14/10/019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1519 / 1522

页数：4

相关论文

共 17 条

[1] Antcliffe GA, 1971, P INT C PHYS SEMIMET, P499
[2] LATTICE SCATTERING MOBILITY OF A TWO-DIMENSIONAL ELECTRON-GAS IN GAAS
BASU, PK
NAG, BR
[J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4849 - 4852
[3] DARR A, 1975, SOLID STATE COMMUN, V17, P455
[4] DORDA G, 1978, SURF SCI, V73, P1
[5] QUANTIZATION EFFECTS IN ZNO ACCUMULATION LAYERS IN CONTACT WITH AN ELECTROLYTE
EGER, D
GOLDSTEIN, Y
[J]. PHYSICAL REVIEW B, 1979, 19 (02): : 1089 - 1097
[6] OPTICAL AND INTERVALLEY SCATTERING IN QUANTIZED INVERSION LAYERS IN SEMICONDUCTORS
FERRY, DK
[J]. SURFACE SCIENCE, 1976, 57 (01) : 218 - 228
[7] 2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER
KAWAJI, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (04) : 906 - &
[8] MAGNETOCONDUCTANCE OSCILLATIONS OF N-TYPE INVERSION LAYERS IN INSB SURFACES
KOTERA, N
KOMATSUB.KF
KATAYAMA, Y
[J]. PHYSICAL REVIEW B, 1972, 5 (08): : 3065 - &
[9] SPECTROSCOPY OF SEMICONDUCTOR INVERSION LAYERS IN HIGH MAGNETIC-FIELDS
KOTTHAUS, JP
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1979, 11 (1-3) : 20 - 25
[10] FIELD-EFFECT MOBILITY IN QUANTIZED ACCUMULATION LAYERS ON ZNO SURFACES
NITZAN, M
GRINSHPAN, Y
GOLDSTEIN, Y
[J]. PHYSICAL REVIEW B, 1979, 19 (08): : 4107 - 4115