MEASUREMENTS OF LOCAL STRAIN VARIATION IN SI1-XGEX/SI HETEROSTRUCTURES

被引：3

作者：

BELL, LD

KAISER, WJ

MANION, SJ

MILLIKEN, AM

PIKE, WT

FATHAUER, RW

机构：

[1] California Inst of Technology, Pasadena

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.587864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The energy splitting of the conduction-band minimum of Si1-xGex due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si1-xGex structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si1-xGex, however, heterogeneity in the strain of the Si1-xGex layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si1-xGex surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM. (C) 1995 American Vacuum Society.

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页码：1602 / 1607

页数：6

相关论文

共 27 条

[1] GRADED ELECTRONIC-STRUCTURE IN A 3 NM STRAINED GE40SI60 QUANTUM-WELL [J].

BATSON, PE ;

MORAR, JF .

PHYSICAL REVIEW LETTERS, 1993, 71 (04) :609-612

[2] QUANTITATIVE STUDY OF ELECTRON-TRANSPORT IN BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].

BAUER, A ;

CUBERES, MT ;

PRIETSCH, M ;

KAINDL, G .

PHYSICAL REVIEW LETTERS, 1993, 71 (01) :149-152

[3]

Bell L. D., 1993, SCANNING TUNNELING M, P307

[4] DIRECT SPECTROSCOPY OF ELECTRON AND HOLE SCATTERING [J].

BELL, LD ;

HECHT, MH ;

KAISER, WJ ;

DAVIS, LC .

PHYSICAL REVIEW LETTERS, 1990, 64 (22) :2679-2682

[5] OBSERVATION OF INTERFACE BAND-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].

BELL, LD ;

KAISER, WJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (20) :2368-2371

[6] BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAINED SI1-XGEX LAYERS [J].

BELL, LD ;

MILLIKEN, AM ;

MANION, SJ ;

KAISER, WJ ;

FATHAUER, RW ;

PIKE, WT .

PHYSICAL REVIEW B, 1994, 50 (11) :8082-8085

[7] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].

BINNING, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61

[8] THE CHARACTERISTICS OF STRAIN-MODULATED SURFACE UNDULATIONS FORMED UPON EPITAXIAL SI1-XGEX ALLOY LAYERS ON SI [J].

CULLIS, AG ;

ROBBINS, DJ ;

PIDDUCK, AJ ;

SMITH, PW .

JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) :333-343

[9] BALLISTIC ELECTRON-EMISSION MICROSCOPY STUDIES OF THE NISI2 SI(111) INTERFACE [J].

FERNANDEZ, A ;

HALLEN, HD ;

HUANG, T ;

BUHRMAN, RA ;

SILCOX, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :590-593

[10] THE 1ST STAGES OF THE FORMATION OF THE INTERFACE BETWEEN GOLD AND SILICON(100) AT ROOM-TEMPERATURE [J].

HANBUCKEN, M ;

IMAM, Z ;

METOIS, JJ ;

LELAY, G .

SURFACE SCIENCE, 1985, 162 (1-3) :628-633