REFLECTANCE VS ELECTROREFLECTANCE MEASUREMENTS ON ARSENIC-DOPED SILICON CRYSTAL

被引：3

作者：

BORGHESI, A ^{[1
]}

GEDDO, M ^{[1
]}

GUIZZETTI, G ^{[1
]}

MAGHINI, D ^{[1
]}

STELLA, A ^{[1
]}

CAMPISANO, U ^{[1
]}

RIMINI, E ^{[1
]}

机构：

[1] UNIV CATANIA,DEPT FIS,I-95129 CATANIA,ITALY

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1988年 / 10卷 / 08期

关键词：

D O I：

10.1007/BF02450198

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：979 / 988

页数：10

共 14 条

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[2] DIRECT DETERMINATION OF SIZES OF EXCITATIONS FROM OPTICAL MEASUREMENTS ON ION-IMPLANTED GAAS [J].

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OLSON, CG ;

LYNCH, DW .

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[3]

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[4]

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[5]

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[6] OPTICAL STUDY OF SELF-ANNEALING IN HIGH-CURRENT ARSENIC-IMPLANTED SILICON [J].

BORGHESI, A ;

CHENJIA, C ;

GUIZZETTI, G ;

NOSENZO, L ;

STELLA, A ;

CAMPISANO, SU ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2773-2776

[7]

CAMPISANO U, 1987, PHYS SCR B, V19, P544

[8]

ENGSTROM H, 1980, J APPL PHYS, V51, P245

[9]

GEDDO M, 1983, NUOVO CIMENTO D, V2, P1526

[10]

PARAY PD, 1976, J VAC SCI TECHNOL, V13, P622

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