ELECTRON-MICROSCOPY OF AS SUPERSATURATED SILICON

被引：31

作者：

ARMIGLIATO, A

NOBILI, D

SOLMI, S

BOURRET, A

WERNER, P

机构：

[1] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE

[2] AKAD WISENSCH DDR,INST FESTKORPERPHYS & ELEKTRMIKROSKOPIE,DDR-4020 HALLE,GER DEM REP

[3] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 12期

关键词：

ARSENIC; -; Applications; MICROSCOPES; ELECTRON;

D O I：

10.1149/1.2108471

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Silicon specimens have been implanted with 1 multiplied by 10**1**6 and 5 multiplied by 10**1**6 As** plus ions/cm**2 and annealed with a pulsed ruby laser, thus giving rise to a supersaturated solution. Subsequent heat-treatments carried out in an inert ambient at either 450 degree or 900 degree C led to a strong deactivation of the dopant. The physical nature of the inactive arsenic has been investigated by transmission electron microscopy (TEM), both in the weak beam and the high resolution imaging modes. For both doses and annealing temperatures, the presence of precipitates, having a diameter ranging from 1. 5 to 3 nm, has been observed.

引用

页码：2560 / 2565

页数：6

共 25 条

[1] PRECIPITATION AND DIFFUSIVITY OF ARSENIC IN SILICON
ANGELUCCI, R
CELOTTI, G
NOBILI, D
SOLMI, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2726 - 2730
[2] ANGELUCCI R, UNPUB
[3] RADIATION-INDUCED ROD-LIKE DEFECTS IN SILICON AND GERMANIUM
BARTSCH, H
HOEHL, D
KASTNER, G
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02): : 543 - 551
[4] GRAIN-BOUNDARY SEGREGATION IN SILICON HEAVILY DOPED WITH PHOSPHORUS AND ARSENIC
CARABELAS, A
NOBILI, D
SOLMI, S
[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 187 - 192
[5] Chu W. K., 1979, AIP C P, V50, P305
[6] HIGH-RESOLUTION STRUCTURE IMAGING AND IMAGE SIMULATION OF STACKING-FAULT TETRAHEDRA IN ION-IMPLANTED SILICON
COENE, W
BENDER, H
AMELINCKX, S
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1985, 52 (03): : 369 - 381
[7] Erbil A., 1985, Advanced Photon and Particle Techniques for the Characterization of Defects in Solids Symposium, P275
[8] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON
FAIR, RB
WEBER, GR
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279
[9] ELECTRICAL-PROPERTIES AND STABILITY OF SUPERSATURATED PHOSPHORUS-DOPED SILICON LAYERS
FINETTI, M
NEGRINI, P
SOLMI, S
NOBILI, D
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1313 - 1317
[10] GALLONI R, 1985, ENERGY BEAM SOLID IN, P331

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