GRAIN-BOUNDARY SEGREGATION IN SILICON HEAVILY DOPED WITH PHOSPHORUS AND ARSENIC

被引：20

作者：

CARABELAS, A

NOBILI, D

SOLMI, S

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC1期

关键词：

D O I：

10.1051/jphyscol:1982125

中图分类号：

学科分类号：

摘要：

引用

页码：187 / 192

页数：6

共 14 条

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