OPTIMIZATION OF THIN SI OXYNITRIDE FILMS PRODUCED BY RAPID THERMAL-PROCESSING FOR APPLICATIONS IN EEPROMS

被引：14

作者：

DUTOIT, M ^{[1
]}

LETOURNEAU, P ^{[1
]}

MI, J ^{[1
]}

NOVKOVSKI, N ^{[1
]}

MANTHEY, J ^{[1
]}

DEZALDIVAR, JS ^{[1
]}

机构：

[1] FASELEC AG PHILIPS COMPONENTS,CH-8045 ZURICH,SWITZERLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 02期

关键词：

D O I：

10.1149/1.2221086

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We optimized thin reoxidized nitrided SiO2 (ROXNOX) films produced by RTP on the basis of a careful analysis of the requirements of EEPROMs. The influence of oxidation, nitridation, and reoxidation parameters on charge-trapping and breakdown during a constant current stress was studied in detail. We show that a very light nitridation gives a maximum nitrogen concentration at the Si/SiO2 interface and the largest increase in the endurance of the films under a high-field stress. The physical basis of these results is discussed. The improvement was confirmed on complete 1 kbit memory arrays produced with a 3 mum CMOS process with self-aligned contacts. Their lifetime was increased by at least an order of magnitude, up to more than 10(6) cycles.

引用

页码：549 / 555

页数：7

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