RADIATION HARDENED METAL-OXIDE-SEMICONDUCTOR DEVICES WITH GATE DIELECTRICS GROWN BY RAPID THERMAL-PROCESSING IN O2 WITH DILUTED NF3

被引：19

作者：

AHN, J

LO, GQ

TING, W

KWONG, DL

KUEHNE, J

MAGEE, CW

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265

[2] EVANS E INC,PLAINSBORO,NJ 08536

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.104657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Radiation-hardened, fluorinated gate oxides have been obtained by rapid thermal processing of silicon in O2 with diluted NF3. Diluted NF3 is used as a source of fluorine and is introduced during the initial stage of rapid thermal processing. It is found that optimum amounts of fluorine incorporated at the Si/SiO2 interface improve resistance against x-ray radiation; however, excessive amounts of fluorine degrade the radiation hardness.

引用

页码：425 / 427

页数：3

共 14 条

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