REDUCTION OF INTERFACE-STATE DENSITY BY F2 TREATMENT IN A METAL-OXIDE-SEMICONDUCTOR DIODE PREPARED FROM A PHOTOCHEMICAL VAPOR-DEPOSITED SIO2 FILM

被引：14

作者：

INOUE, K

NAKAMURA, M

OKUYAMA, M

HAMAKAWA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 23期

关键词：

D O I：

10.1063/1.102292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2402 / 2404

页数：3

共 10 条

[1] GROWTH OF SIO2 THIN-FILM BY SELECTIVE EXCITATION PHOTO-CVD USING 123.6-NM VUV LIGHT
INOUE, K
OKUYAMA, M
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2152 - L2154
[2] LOW-TEMPERATURE GROWTH OF SIO2 THIN-FILM BY DOUBLE-EXCITATION PHOTO-CVD
INOUE, K
MICHIMORI, M
OKUYAMA, M
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (06): : 805 - 811
[3] EFFECT OF ORGANIC CONTAMINANTS ON THE OXIDATION-KINETICS OF SILICON AT ROOM-TEMPERATURE
LICCIARDELLO, A
PUGLISI, O
PIGNATARO, S
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 41 - 43
[4] REACTION OF HF WITH POROUS GLASS
LOW, MJD
RAMASUBR.N
RAMAMURT.P
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1969, 52 (03) : 124 - &
[5] OKABE H, 1978, PHOTOCHEMISTRY SMALL, P184
[6] SIO2 THIN-FILM PREPARED FROM SI3H8 AND O-2 BY PHOTO-CVD USING DOUBLE EXCITATION
OKUYAMA, M
FUJIKI, N
INOUE, K
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L908 - L910
[7] PHOTOINDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 FILM USING DIRECT EXCITATION PROCESS BY DEUTERIUM LAMP
OKUYAMA, M
TOYODA, Y
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L97 - L99
[8] THE FORMATION OF HYDROGEN PASSIVATED SILICON SINGLE-CRYSTAL SURFACES USING ULTRAVIOLET CLEANING AND HF ETCHING
TAKAHAGI, T
NAGAI, I
ISHITANI, A
KURODA, H
NAGASAWA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3516 - 3521
[9] PHOTODESORPTION STUDIES OF CO2 FROM AN OXYGEN-SATURATED SILICON(100) SURFACE
VANHIEU, N
LICHTMAN, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (01): : 1 - 6
[10] DEEP LEVEL TRANSIENT SPECTROSCOPY OF BULK TRAPS AND INTERFACE STATES IN SI MOS DIODES
YAMASAKI, K
YOSHIDA, M
SUGANO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (01) : 113 - 122

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