GENERATION OF INTERFACE STATES IN NITRIDED OXIDE GATE DIELECTRICS BY IONIZING-RADIATION AND FOWLER-NORDHEIM STRESSING

被引：24

作者：

DUNN, GJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 17期

关键词：

D O I：

10.1063/1.100440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1650 / 1651

页数：2

共 28 条

[1]

BOESCH HE, IN PRESS IEEE T NUCL

[2] AMPHOTERIC DEFECTS AT THE SI-SIO2 INTERFACE [J].

CHANG, ST ;

WU, JK ;

LYON, SA .

APPLIED PHYSICS LETTERS, 1986, 48 (10) :662-664

[3] LOCATION OF POSITIVE CHARGE TRAPPED NEAR THE SI-SIO2 INTERFACE AT LOW-TEMPERATURE [J].

CHANG, ST ;

LYON, SA .

APPLIED PHYSICS LETTERS, 1986, 48 (02) :136-138

[4] RADIATION EFFECTS IN LOW-PRESSURE REOXIDIZED NITRIDED OXIDE GATE DIELECTRICS [J].

DUNN, GJ ;

JAYARAMAN, R ;

YANG, W ;

SODINI, CG .

APPLIED PHYSICS LETTERS, 1988, 52 (20) :1713-1715

[5]

HORI T, 1987, IEDM, P570

[6] RELATIONSHIP BETWEEN TRAPPED HOLES AND INTERFACE STATES IN MOS CAPACITORS [J].

HU, G ;

JOHNSON, WC .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :590-591

[7] RELATIONSHIP BETWEEN X-RAY-PRODUCED HOLES AND INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J].

HU, GJ ;

JOHNSON, WC .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1441-1444

[8]

Jayaraman R., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P668

[9]

Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

[10] INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES [J].

LAI, SK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2540-2546

← 1 2 3 →