共 22 条
- [4] STRESS AND TEMPERATURE-DEPENDENCE OF SUBBAND STRUCTURE IN SILICON INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1979, 19 (12): : 6397 - 6406
- [5] THEORY OF FINITE-TEMPERATURE SCREENING IN A DISORDERED TWO-DIMENSIONAL ELECTRON-GAS [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5401 - 5405
- [6] ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACE INVERSION-LAYERS AT FINITE TEMPERATURE - THE SI(100)-SIO2 SYSTEM [J]. PHYSICAL REVIEW B, 1982, 26 (02): : 960 - 974
- [9] NEW METHOD FOR CALCULATING 1-PARTICLE GREENS FUNCTION WITH APPLICATION TO ELECTRON-GAS PROBLEM [J]. PHYSICAL REVIEW, 1965, 139 (3A): : A796 - +
- [10] HU B, UNPUB