共 59 条
- [2] ELECTRICAL-CONDUCTION IN HEAVILY DOPED GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1972, 26 (04): : 1027 - &
- [3] STRESS DEPENDENCE OF THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1982, 26 (02): : 1082 - 1085
- [4] MAGNETIC FIELD-INDUCED METAL-INSULATOR-TRANSITION IN INP - NEW RESULT AT VERY LOW-TEMPERATURES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (16): : L411 - L416
- [5] LOW-TEMPERATURE, LOW-FREQUENCY COMPLEX CONDUCTANCE MEASUREMENTS FOR A BARELY INSULATING SI - AS SAMPLE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (22): : L491 - L497
- [6] CASTNER TG, 1985, LOCALIZATION METAL I, P9
- [7] CASTNER TG, 1987, SPRINGER LECTURE NOT, P366
- [8] HIGH-STRESS PIEZORESISTANCE AND MOBILITY IN DEGENERATE SB-DOPED GERMANIUM [J]. PHYSICAL REVIEW, 1965, 137 (6A): : 1847 - &
- [9] HIGH-STRESS PIEZORESISTANCE IN DEGENERATE ARSENIC-DOPED GERMANIUM [J]. PHYSICAL REVIEW, 1965, 139 (5A): : 1628 - &